Semiconductor device

Details Semiconductor device Semiconductor device

2005-10-18

2005-10-18

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S760000

Reexamination Certificate

active

06956289

ABSTRACT:
An object is to reduce noise superimposed upon a signal carried on an interconnection or cross-talk. Dummy interconnections (9, 21and25) are formed in the same layers respectively as interconnections (8, 19and28) formed in a plurality of layers. The dummy interconnections (9, 21and25) are connected through dummy plugs (22and26). At least the dummy interconnections (9a,21a,21cand25a) and the dummy plugs (22a,26aand26c) are fixed at a ground potential.

REFERENCES:
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patent: 5811352 (1998-09-01), Numata et al.
patent: 6559485 (2003-05-01), Aoyama
patent: 4-179126 (1992-06-01), None
patent: 8-222632 (1996-08-01), None
patent: 10-199882 (1998-07-01), None
T. Udea, et al., 1999 Symposium on VLSI Technology Digest of Technical Papers, pps. 111-112, “Integration of 3 Level Air Gap Interconnect for Sub-Quarter Micron CMOS,” 1999.
S. Takahashi, et al., IEDM 98, pps. 833-836, “Interconnect Design Strategy; Structures, Repeaters and Materials Toward 0.1μm ULSIs With a Giga-Hertz Clock Operations,” 1998.

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