Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier

Reexamination Certificate

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C029S516000

Reexamination Certificate

active

06855998

ABSTRACT:
A semiconductor device comprises a field effect transistor and a schottky-barrier diode mounted in the same semiconductor substrate, the semiconductor device having buried doped layers buried at a predetermined interval in a drift layer of a first conductivity type in a schottky-barrier diode region so as to have a predetermined depth, the buried doped layers having a second conductivity type.

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patent: 6037632 (2000-03-01), Omura et al.
patent: 6184555 (2001-02-01), Tihanyi et al.
patent: 6239466 (2001-05-01), Elasser et al.
patent: 9-331063 (1997-12-01), None
patent: 11-501458 (1999-02-01), None
patent: 2000-504879 (2000-04-01), None
patent: 2001-15744 (2001-01-01), None
patent: 02001274414 (2001-10-01), None
patent: 2001-523895 (2001-11-01), None
patent: WO 9707533 (1997-02-01), None
patent: WO 9926296 (1999-05-01), None

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