Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier
Reexamination Certificate
2005-02-15
2005-02-15
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
C029S516000
Reexamination Certificate
active
06855998
ABSTRACT:
A semiconductor device comprises a field effect transistor and a schottky-barrier diode mounted in the same semiconductor substrate, the semiconductor device having buried doped layers buried at a predetermined interval in a drift layer of a first conductivity type in a schottky-barrier diode region so as to have a predetermined depth, the buried doped layers having a second conductivity type.
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