Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2005-03-15
2005-03-15
Picardat, Kevin M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S135000, C257S138000, C257S139000
Reexamination Certificate
active
06867437
ABSTRACT:
A pin diode is formed by a p+collector region, an n type buffer region, an n−region and an n+cathode region. A trench is formed from the surface of n+cathode region through n+cathode region to reach n−region. An insulating film is formed along an inner wall surface of trench. A gate electrode layer is formed to oppose to the sidewall of n+cathode region with insulating film interposed. A cathode electrode is formed to be electrically connected to n+cathode region. An anode electrode is formed to be electrically connected to p+collector region. The n+cathode region is formed entirely over the surface between trenches extending parallel to each other. Thus, a power semiconductor device in which gate control circuit is simplified and which has good on property can be obtained.
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Harada Masana
Minato Tadaharu
Nakamura Katsumi
Takahashi Tetsuo
McDermott Will & Emery LLP
Picardat Kevin M.
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