Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-03-01
2005-03-01
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S750000, C257S643000
Reexamination Certificate
active
06861755
ABSTRACT:
The semiconductor device comprises an insulating film114formed mainly of a film of polyallyl ether resin; an interconnection structure116buried in the insulating film114, and having a via portion buried in a groove-shaped via hole and an interconnection portion formed on the via portion and having an eave-shaped portion horizontally extended beyond the via portion; an insulating film118formed on the insulating film114with the interconnection structure116buried in and formed mainly of a film of organosilicate glass; and an interconnection structure120buried in the insulating film118and connected to the interconnection structure116. Thus, the stresses to be exerted to the insulating films are decreased, the generation of cracks and peelings generated in the interfaces between the insulating films and in the insulating films due to the stresses generated at the ends of the interconnection structures can be effective prevented.
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Hosoda Tsutomu
Yamanoue Akira
Fujitsu Limited
Nguyen Cuong
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