Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1998-12-11
2000-02-29
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 14, H01L 2906
Patent
active
060312459
ABSTRACT:
A semiconductor device is presented which exhibits both interband and intraband tunnelling. The device comprises two active layers (21, 23) which are sandwiched between two barrier layers (3, 5). These layers are located between first and second terminals (7, 9). The active layers (21, 23) are chosen such that the conduction band edge (27) of the first active layer (21) having a lower energy than the valence band edge (25) of the second active layer (23);
REFERENCES:
patent: 5294809 (1994-03-01), Goronkin et al.
patent: 5588015 (1996-12-01), Yang
Mark Sweeny, et al., "Resonant Interband Tunnel Diodes", Applied Physics Letters, vol. 54, No. 6, Feb. 6, 1989, pp. 546-548.
Cooper Llewellyn John
Leadbeater Mark Levence
Patel Nalin Kumar
Chaudhuri Olik
Kabushiki Kaisha Toshiba
Wille Douglas A.
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