1983-12-20
1990-03-13
Sikes, William L.
357 80, H01L 2302, H01L 2312
Patent
active
049086944
DESCRIPTION:
BRIEF SUMMARY
BACKGROUND OF THE INVENTION
This invention relates to a semiconductor device and specifically to a semiconductor device having a package structure which has been improved so that it can be applied to an ultra-high frequency circuit or high speed digital circuit.
Along with the rapid progress in improvements in data processing system operation speed and capacity, efforts have been made continuously to development of a semiconductor device to be applied to data processing which realizes operation at a higher frequency and higher electrical power.
For example, as an active semiconductor device, a semiconductor element consisting of a compound semiconductor such as gallium-arsenide (GaAs), for example, a gallium-arsenide Schottky barrier type field effect transistor, have been applied in place of existing semiconductor elements consisting of silicon (Si). Such gallium-arsenide Schottky barrier type field effect transistors have been further improved so that they can now operate at a higher frequency and provide a higher electrical power.
On the other hand, packages for accommodating such a semiconductor device operating at a higher frequency and electrical power, having the structure shown in FIG. 1 through FIG. 12, have been proposed.
FIG. 1 is a perspective view of the main part of a ceramic frame type package, wherein 1 is a copper (Cu) base; 2 is a ceramic case; 2A is a first ceramic frame; 2B is a second ceramic frame; 3 is a lead segment; and 4 is a metallized film for sealing, respectively.
FIG. 2 is a perspective view of the main part of a ceramic plate type package, wherein 5 is a copper base; 6 is a ceramic plate; 6A is a window for accommodating a semiconductor element; and 7 is a conductive film, respectively.
These packages are now widely used because they are small in size and cheap to use as a package for a semiconductor element or small-size solid state apparatus. An attempt to obtain a higher performance package encounters various problems.
For example, in the case of the structure shown in FIG. 1, when an element is hermetically sealed by securing a ceramic cover using a metallized film 4, the ring-shaped metallized film 4 on the ceramic frame 2B may resonate. Such resonance occurs in at a frequency determined in accordance with a circumference of the ring-shaped metallized film 4. When a metal cover or a ceramic cover which is metallized is used for sealing, the resonant frequency can be raised a little but resonance occurs in accordance with the area of metallized part. Therefore, this type of package is restricted to relatively low frequency use and is generally not used in the ultra-high frequency situations for this reason.
Moreover, the package with a structure as shown in FIG. 2 is also not suitable for ultra-high frequency or speed because crosstalk may occurs between the conductive films 7, however this package is designed for a high speed digital circuit. Recently, the requirement for high speed digital circuits also has urged development of circuits particularly for high speed operation, and accordingly circuits operating in the GHz band are now appearing in the Si based systems as well as in the GaAs based system elements. These circuits, for example, logic circuits and memory circuits, have complicated functions and base input/output terminals requiring as many as 10 to 40 pins. Improvement in high speed operation of these logic and memory circuits is accompanied by other problems in addition to the sealing problem, and crosstalk mentioned above, for example, signal leakage due to combination of signals between terminals due to existence of many terminals within a restricted area, resonance and oscillation. In addition high speed operation is degraded by an increase of the parasitic capacitance at the sealing area.
Circuits for use in an ultra-high frequency band are currently formed on a carrier manufactured by laminating copper and a ceramic, and the carriers are placed within a metal case type package as shown in FIG. 3 or FIG. 4, and the entire assembly is sealed to protect
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patent: 4186994 (1980-02-01), Denkin et al.
patent: 4266090 (1981-05-01), Scherer
patent: 4267565 (1981-05-01), Puppolo et al.
patent: 4412093 (1983-10-01), Wildeboer
patent: 4455448 (1984-06-01), Bertolina
patent: 4461924 (1984-07-01), Butt
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Fukuta Masumi
Hidaka Norio
Yamamura Shigeyuki
Fujitsu Limited
Sikes William L.
Wise Robert E.
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