Semiconductor device

Details Semiconductor device Semiconductor device

2005-09-27

2005-09-27

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Chip mounted on chip

C257S773000, C257S774000, C257S776000, C257S778000

Reexamination Certificate

active

06949835

ABSTRACT:
The size of a power amplifier module is reduced. The power amplifier module includes a module substrate, a lower chip flip-connected to the module substrate, an upper chip stacked face up onto the lower chip, a common electrode disposed on a back surface of the upper chip, plural wires for connecting the upper chip and the module substrate with each other, plural wires for connecting the common electrode and the module substrate with each other, plural chip parts mounted on the module substrate, and a sealing portion formed on the main surface of the module substrate. The common electrode is connected to the module substrate through wires to strengthen the GND of the upper chip. Since the lower chip is flip-connected to the module substrate, the difference in size between the upper and lower chips is diminished to attain a reduction in size of the power amplifier module.

REFERENCES:
patent: 2002/0027295 (2002-03-01), Kikuma et al.
patent: 2002/0041027 (2002-04-01), Sugizaki
patent: 07-058280 (1995-03-01), None

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