Semiconductor device

Details Semiconductor device Semiconductor device

2005-04-05

2005-04-05

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000

Reexamination Certificate

active

06876011

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a channel layer, a Schottky layer, a first layer having a narrow band gap than the Schottky layer, a second layer having band discontinuity with the Schottky layer, a gate electrode, an n+ layer, a source electrode, and a drain electrode. The first and second layers are within the Schottky layer, and the second layer is disposed on the first layer.

REFERENCES:
patent: 5504353 (1996-04-01), Kuzuhara
patent: 5789767 (1998-08-01), Omura
patent: 5900653 (1999-05-01), Suzuki et al.
patent: 0 301 862 (1989-01-01), None
patent: 6-244218 (1994-09-01), None
patent: 9-205196 (1997-08-01), None
patent: 9-246528 (1997-09-01), None
C.S. Whelan et al., “Low Noise In0.32(AlGa)0.68As/In0.43Ga0.57As Metamorphic HEMT on GaAs Substrate with 850 mW/mm Output Power Density”,IEEE Electron Letters,Jan. 2000, pp. 5-8; vol. 21, No. 1.
J.C.M. Hwang, “Gradual Degradation Under RF Overdrive Of MESFETs and PHEMTs”,GaAs IC Symposium,1995, pp. 81-84.
Y.A. Tkachenko et al., “Hot-Electron-Induced Degradation of Metal-Semiconductor Field-Effect Transistors”,GaAs IC Symposium,1994, pp. 259-262.
L. Aucoin et al., “PHEMT Reliability: The Importance of RF Life Testing”,GaAs Mantech,1997, pp. 42-45.

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