Semiconductor device

Details Semiconductor device Semiconductor device

2005-01-25

2005-01-25

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S306000, C438S149000, C438S256000

Reexamination Certificate

active

06847066

ABSTRACT:
A thin film passive element includes at least one of a capacitance element having a plurality of conductive layers and a dielectric material layer and an inductance element formed of a patterned conductive layer is stacked on a circuit element-forming region of a semiconductor substrate provided with a plurality of connection pads and is connected to the circuit element of the circuit element-forming region.

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Related to USSN 09/499,599 filed Feb. 7, 2000; Y. Aoki et al; Semiconductor Device.
Copy of Office Action dated Nov. 7, 2001 issued in co-pending U.S. Appl. No. 09/499,599, filed Feb. 7, 2000; Applicants: Yutaka Aoki et al.
Copy of Office Action dated May 2, 2002 issued in co-pending U.S. Appl. No. 09/499,599, filed Feb. 7, 2000; Applicants: Yutaki Aoki et al.
Copy of Office Action dated Jun. 25, 2004 issued in co-pending U.S. Appl. No. 10/254,222, filed Sep. 25, 2002; Applicants: Yutaka Aoki et al.
van Zant, Peter, Microchip Fabrication: A practical Guide to Semiconductor Processing, 4thed., 2000, McGrawhill, New York, pp. 3.

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