Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2005-05-17
2005-05-17
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S133000, C257S153000, C257S263000, C257S327000, C257S337000, C257S339000
Reexamination Certificate
active
06894319
ABSTRACT:
A MOS semiconductor device includes n−-type surface regions, which are extended portions of an n−-type drift layer12extended to the surface of the semiconductor chip. Each n−-type surface region14is shaped with a stripe surrounded by a p-type well region. The surface area ratio between n−-type surface regions14and p-type well region13including an n+-type region15is from 0.01 to 0.2. The MOS semiconductor device further includes, in the breakdown withstanding region thereof, a plurality of guard rings, the number of which is equal to or more than the number n calculated from the following equation n=(Breakdown voltage Vbr (V))/100, and the spacing between the adjacent guard rings is set at 1 μm or less.
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Abe Hitoshi
Fujihira Tatsuhiko
Inoue Masanori
Kobayashi Takashi
Niimura Yasushi
Flynn Nathan J.
Fuji Electric & Co., Ltd.
Greene Pershelle
Rossi & Associates
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