Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

Reexamination Certificate

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Details

C257S133000, C257S153000, C257S263000, C257S327000, C257S337000, C257S339000

Reexamination Certificate

active

06894319

ABSTRACT:
A MOS semiconductor device includes n−-type surface regions, which are extended portions of an n−-type drift layer12extended to the surface of the semiconductor chip. Each n−-type surface region14is shaped with a stripe surrounded by a p-type well region. The surface area ratio between n−-type surface regions14and p-type well region13including an n+-type region15is from 0.01 to 0.2. The MOS semiconductor device further includes, in the breakdown withstanding region thereof, a plurality of guard rings, the number of which is equal to or more than the number n calculated from the following equation n=(Breakdown voltage Vbr (V))/100, and the spacing between the adjacent guard rings is set at 1 μm or less.

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“A Parametric Study of Power Mosfets”; Chenming Hu; Proceedings of the Conference of Rec. Power Electronics Specialists, 1979 IEEE; pp. 385-395.

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