Semiconductor device

Details Semiconductor device Semiconductor device

2005-04-12

2005-04-12

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257S076000, C257S079000, C257S352000

Reexamination Certificate

active

06878962

ABSTRACT:
The present invention provides a high quality thin film comparable to a bulk single crystal and providres a semiconductor device with superior characteristics. A channel layer11, for example, is formed of a semiconductor such as zinc oxide ZnO or the like. A source12, a drain13, a gate14and a gate insulating layer15are formed on the channel layer111to form an FET. For a substrate16, a proper material is selected depending on a thin film material of the channel layer11in consideration of compatibility of both lattice constants. For example, if ZnO is used for the semiconductor of the channel layer as a base material, ScAlMgO4or the like can be used for the substrate16.

REFERENCES:
patent: 5530267 (1996-06-01), Brandle, Jr. et al.
patent: 6057561 (2000-05-01), Kawasaki et al.
patent: 6156581 (2000-12-01), Vaudo et al.
patent: 0 863 555 (1998-09-01), None
patent: 08-288220 (1996-11-01), None
patent: 8-288220 (1996-11-01), None
patent: 10-256673 (1998-09-01), None
patent: 10-270749 (1998-10-01), None
N. Kimizuka, et al., Journal of Solid State Chemistry, vol. 78, pp. 98-107, “Structural classification of RAO3(MO)nCompounds (R = Sc, In, Y, OR Lanthanides; A = Fe(III), Ga, Cr, OR Al;M= Divalent Cation; n = 1-11)”, 1989.
N. Kimizuka, et al., Journal of Solid State Chemistry, vol. 74, pp. 98-109, “Homologous Compounds, InFeO3(ZnO)m(m= 1-9)”, 1988.
J. Koike, et al., Jpn. J. Appl. Phys., vol. 34, No. 5B, pp. 2678-2682, “Quasi-Microwave Band Longitudinally Coupled Surface Acoustic Wave Resonator Filters Using ZnO/Sapphire Substrate”, 1995.
A. Ohtomo, et al., Applied Physics Letters, vol. 75, No. 17, pp. 2635-2637, “Single Crystalline ZnO Films Grown On Lattice-Matched ScAIMgO4(0001)”, Oct. 25, 1999.
C.D. Brandle, et al., Solid-State Electronics, vol. 41, No. 12, pp. 1943-1945, “Stability of Hydrogen In ScAIMgO4”, 1997.
E. S. Hellman, et al., 3 pages, “ScAIMgO4: An Oxide Substrate For GaN Epitaxy” MRS Internet Journal of Nitride Semiconductor Research, vol. 1, Article 1, “ScAIMgO4: An Oxide Substrate For GaN Epitaxy”, Jan. 16, 1996.
PCT International Preliminary Examination Report for Interntional Application No. PCT/JP00/01736. (6 Pages).
Kawasaki et al., “Fabrication of Alloys and Superlattices Based on ZnO Towards Ultraviolet Laser”, Material Science and Engineering, B65 (1998), pp. 263-266.
Koike et al., “Quasi-Microwave Band Longitudinally Coupled Surface Acoustic Wave Resonator Filters Using ZnO/Sapphire Substrate”, Jpn. J. Appl. Phys. vol. 34, (1995), pp. 2678-2682.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3411186