Semiconductor device

Electricity: electrical systems and devices – Housing or mounting assemblies with diverse electrical... – For electronic systems and devices

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C361S778000

Reexamination Certificate

active

06842346

ABSTRACT:
Disclosed is a technique capable of improving a power supply efficiency in a power supply circuit. A power MOSFET in a high side of a combined power MOSFET constituting a DC-DC converter is constituted of a horizontal MOSFET, and a power MOSFET in a low side thereof is constituted of a vertical MOSFET.

REFERENCES:
patent: 4454523 (1984-06-01), Hill
patent: 4631565 (1986-12-01), Tihanyi
patent: 4654548 (1987-03-01), Tanizawa et al.
patent: 4730129 (1988-03-01), Kunitoki et al.
patent: 4900953 (1990-02-01), Watanabe
patent: 4990976 (1991-02-01), Hattori
patent: 5185649 (1993-02-01), Bertotti et al.
patent: 5206544 (1993-04-01), Chen et al.
patent: 5313088 (1994-05-01), Takahashi et al.
patent: 5469085 (1995-11-01), Shibata et al.
patent: 5497023 (1996-03-01), Nakazato et al.
patent: 5650622 (1997-07-01), Ookawa et al.
patent: 5801548 (1998-09-01), Lee et al.
patent: 6064223 (2000-05-01), Lu et al.
patent: 6208200 (2001-03-01), Arakawa
Nick X. Sun, Alex Q. Huang and F.C. Lee, “0.35μm, 43 μΩcm2Power, 6mΩ Power MOSFET to Power Future Microprocessor,” 1999 IEEE, pp. 77-80.
Wharton McDaniel, “MOSFET Selection Is Key To Successful DC-DC Conversion,” Supplement to Electronic Design, Dec. 6, 1999, pp. 158-165.
Edward Stanford, “Device Requirements For Future CPU Voltage Regulators,” Intel. Corp., pp. 1-6.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3409588

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.