Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-01-04
2005-01-04
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S750000, C257S758000, C257S759000, C257S760000, C438S618000, C438S619000, C438S620000, C438S621000, C438S622000, C438S623000, C438S624000, C438S625000, C438S626000, C438S627000
Reexamination Certificate
active
06838772
ABSTRACT:
A semiconductor device has a first insulating film deposited over a semiconductor substrate, an interconnect opening portion formed in the first insulating film, an interconnect disposed in the interconnect opening portion, and a second insulating film formed over the first insulating film and the interconnect. The interconnect has a first conductor film, a second conductor film formed via the first conductor film and comprised of one of titanium silicon nitride, tantalum silicon nitride, tantalum nitride and titanium nitride, a third conductor film formed via the first and second conductor films and comprised of a material having good adhesion with copper; and a fourth conductor film formed via the first, second and third conductor conductor film having a copper as a main component. Thus, it is possible to improve adhesion between a conductor film composed mainly of copper and another conductor film having a copper-diffusion barrier function in the interconnect.
REFERENCES:
patent: 5798299 (1998-08-01), Chung
patent: 11-233631 (1999-08-01), None
patent: 2000-040872 (2000-02-01), None
Ashihara Hiroshi
Ishikawa Kensuke
Saito Tatsuyuki
Saitoh Toshio
Antonelli Terry Stout & Kraus LLP
Nelms David
Renesas Technology Corp.
Tran Mai-Huong
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