Semiconductor device

Details Semiconductor device Semiconductor device

2005-01-18

2005-01-18

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

C257S508000

Reexamination Certificate

active

06844613

ABSTRACT:
A floating electrode (201) and an electrode (202) are coupled together by an electrostatic capacitance (C1), the floating electrode (201) and an electrode (203) are coupled together by an electrostatic capacitance (C2), and an electrode (200) and the floating electrode (201) are coupled together by an electrostatic capacitance (C3). The potential of the floating electrode (201) is lower than the potential applied to the electrode (200). The floating electrode (201) covers above the electrode (200). For example, as viewed in section, the elevation angles (α, β) of widthwise edges of the electrode (201) from the near widthwise edges of the electrode (200) should preferably be not more than 45 degrees.

REFERENCES:
patent: 4292642 (1981-09-01), Appels et al.
patent: 4926243 (1990-05-01), Nakagawa et al.
patent: 5455439 (1995-10-01), Terashima et al.
patent: 5585664 (1996-12-01), Ito
patent: 5731628 (1998-03-01), Terashima
patent: 5907182 (1999-05-01), Terashima
patent: 6307252 (2001-10-01), Knoedl, Jr.
patent: 6344888 (2002-02-01), Yasukawa
patent: 6348722 (2002-02-01), Yoshikoshi
patent: 5-47787 (1993-02-01), None
patent: 8-274167 (1996-10-01), None
patent: 10-12607 (1998-01-01), None
patent: 11-204733 (1999-07-01), None

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