Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Recrystallized semiconductor material
Reexamination Certificate
2005-04-12
2005-04-12
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Recrystallized semiconductor material
C257S069000, C257S070000, C438S166000
Reexamination Certificate
active
06878968
ABSTRACT:
A metallic element is effectively removed from a semiconductor film crystallized by using the metallic element. The concentration distribution of phosphorous or antimony in the depth direction of at least one of a source and a drain of a TFT semiconductor film has: a region in which the concentration is 1×1020atoms/cm3or less is 5 nm or greater in thickness, and 5×1019atoms/cm3or greater in the maximum value. By creating this concentration distribution, and by thermal annealing at about between 500 and 650° C., the metallic element within a channel forming region diffuses to the source or the drain, and at the same time as gettering is accomplished, the region in which the concentration is 1×1020atoms/cm3or less is made into a nucleus and the source region/drain region is recrystallized.
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Costellia Jeffrey L.
Flynn Nathan J.
Mondt Johannes
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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