Semiconductor device

Details Semiconductor device Semiconductor device

2005-01-25

2005-01-25

Kang, Donghee (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S019000, C257S198000, C257S564000, C257S588000, C438S235000, C438S309000, C438S312000, C438S317000

Reexamination Certificate

active

06847063

ABSTRACT:
In a semiconductor device acting as an HBT, an emitter/base laminate portion is provided on a Si epitaxially grown layer in the SiGeC-HBT. The emitter/base laminate portion includes a SiGeC spacer layer, a SiGeC core base layer containing the boron, a Si cap layer, and an emitter layer formed by introducing phosphorous into the Si cap layer. The C content of the SiGeC spacer layer is equal to or lower than that of the SiGeC core base layer.

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