Semiconductor device

Details Semiconductor device Semiconductor device

1985-03-19

1988-07-19

Wojciechowicz, Edward J.

357 16, 357 58, 357 61, H01L 2972

Patent

active

047588705

ABSTRACT:
A III-V semiconductor device is disclosed, which includes an emitter region, an emitter barrier region having such a barrier height as to substantially restrict a thermionic emission current as compared with a tunneling current and such a barrier width as to permit the tunneling current, a base region containing indium and having higher electron affinity than said emitter region and a collector barrier region having such a barrier height as to substantially prohibit a thermally distributed electron from overflowing and such a barrier width as to substantially prohibit the tunneling current.

REFERENCES:
patent: 4485391 (1984-11-01), Poulain et al.
patent: 4608586 (1986-08-01), Kim

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