Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1999-02-08
2000-08-22
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
H01L 310328
Patent
active
061076546
ABSTRACT:
There is provided a semiconductor device having a novel structure in which high operating performance and high reliability can be achieved at the same time.
In an active region 102 sandwiched by a source region 101 and a drain region 103 constituted by a crystalline semiconductor, a Si.sub.X Ge.sub.1-X (0<X<1) region 105 is formed by doping the same with germanium locally. The expansion of a depletion layer from the drain toward the source is effectively suppressed utilizing the difference in the band structures of the Si.sub.X Ge.sub.1-X region 105 and a Si region 106 doped with no germanium.
REFERENCES:
patent: 4549336 (1985-10-01), Sheppard
patent: 4710788 (1987-12-01), Dambkes et al.
patent: 5210437 (1993-05-01), Sawada et al.
patent: 5272365 (1993-12-01), Nakagawa
patent: 5324960 (1994-06-01), Pfiester et al.
patent: 5461250 (1995-10-01), Burghartz et al.
patent: 5786618 (1998-07-01), Wen
patent: 5859443 (1999-01-01), Yamazaki et al.
patent: 5905291 (1999-05-01), Utsunomiya et al.
patent: 5952699 (1999-09-01), Yamazaki et al.
Chaudhuri Olik
Semiconductor Energy Laboratory Co,. Ltd.
Wille Douglas A.
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