Semiconductor device

Details Semiconductor device Semiconductor device

1990-09-13

1992-01-14

Hille, Rolf

Fishing, trapping, and vermin destroying

357 61, 437 84, 437 93, H01L 2904, H01L 29161, H01L 2120

Patent

active

050815199

ABSTRACT:
A semiconductor device includes a single crystal III-V compound semiconductor layer disposed on a silicon on sapphire substrate comprising a silicon layer disposed on a sapphire substrate, the silicon on sapphire substrate including a silicon (001) oriented crystalline film grown on the (1102) R face of the sapphire substrate tilted 0.1 to 10 degrees toward the <110> direction or <110> direction of the silicon film away from the <0001> sapphire C axis.

REFERENCES:
Ueda et al., "Effects of the Substrate. . . Si Substrate", Japanese Journal of Applied Physics, vol. 25, No. 9, 1986, pp. L789-L791.

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