Semiconductor device

Details Semiconductor device Semiconductor device

1991-08-07

1993-04-06

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Plural non-isolated transistor structures in same structure

257 66, 257288, H01L 4500, H01L 2701, H01L 2713

Patent

active

052006301

ABSTRACT:
A semiconductor device including a semiconducting layer made of polycrystalline silicon, an insulating film provided on an upper face of the semiconducting layer and an electrode provided on an upper face of the insulating film such that channels are formed on the upper face of the semiconducting layer, the improvement comprising: a further semiconducting layer made of amorphous silicon, which is provided between the semiconducting layer and the insulating film.

REFERENCES:
patent: 4348746 (1982-09-01), Okabayashi et al.
patent: 4808546 (1989-02-01), Moniwa et al.
patent: 4905072 (1990-02-01), Komatsu et al.
patent: 4942441 (1990-07-01), Konishi et al.

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