Semiconductor device

Details Semiconductor device Semiconductor device

1988-06-24

1990-03-06

James, Andrew J.

357 54, H01L 2348

Patent

active

049070398

ABSTRACT:
A semiconductor device in which a polyimide film is used as an inter-ply insulating film is disclosed. Bonding pads are formed on the polyimide film and an insulating film such as a silicon nitride film is formed on the polyimide film and on the bonding pads except bonding areas thereof. At least one small aperture is formed in the insulating film and a metal layer having an island shape is provided on the polyimide film within the small aperture.

REFERENCES:
patent: 4472730 (1984-09-01), Ohta
patent: 4733289 (1988-03-01), Tsurumaru

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