Semiconductor device

Metal working – Method of mechanical manufacture – Assembling or joining

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Details

29590, 357 59, 357 65, B01J 1700

Patent

active

041976320

ABSTRACT:
A method for fabricating a semiconductor device includes the formation of a monitoring element in a substrate. The monitoring element has substantially the same structure and size as a circuit element on the device which is to be monitored. Polycrystalline electrodes are contacted to the semiconductor regions of the monitoring element and extend on an insulating film covering the surface of the substrate. The electrical characteristics of the monitoring element are measured by contacting probes of a measuring apparatus to portions of the polycrystalline electrodes.

REFERENCES:
patent: 3388457 (1968-06-01), Totta
patent: 3465427 (1969-09-01), Barson
patent: 3699646 (1972-10-01), Vadasz

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