Semiconductor device

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357 41, 357 51, 357 49, H01L 2978

Patent

active

049491377

ABSTRACT:
A semiconductor device comprises a heavily doped semiconductor layer exposed to both principal surfaces of a semiconductor substrate, a semiconductor element such as a diode, a bipolar transistor, and a MOS transistor, etc. formed on one principal surface side of the semiconductor substrate, a resistor region connected in series with the semiconductor element on the other principal surface side of the semiconductor substrate, and an electrode for current detection kept in contact with the semiconductor layer on the one principal surface side.

REFERENCES:
patent: 4553084 (1985-11-01), Wrathall
patent: 4831424 (1989-05-01), Yoshida et al.

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