1989-05-31
1990-08-14
Wojciechowicz, Edward J.
357 41, 357 51, 357 49, H01L 2978
Patent
active
049491377
ABSTRACT:
A semiconductor device comprises a heavily doped semiconductor layer exposed to both principal surfaces of a semiconductor substrate, a semiconductor element such as a diode, a bipolar transistor, and a MOS transistor, etc. formed on one principal surface side of the semiconductor substrate, a resistor region connected in series with the semiconductor element on the other principal surface side of the semiconductor substrate, and an electrode for current detection kept in contact with the semiconductor layer on the one principal surface side.
REFERENCES:
patent: 4553084 (1985-11-01), Wrathall
patent: 4831424 (1989-05-01), Yoshida et al.
Matsuzaki Hitoshi
Miyazaki Hideki
Shirasawa Toshikatsu
Tukuda Kiyoshi
Hitachi , Ltd.
Wojciechowicz Edward J.
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