Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Patent
1994-07-15
1997-03-11
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
257 59, 257 72, 257203, H01L 2904, H01L 3300, H01L 2710
Patent
active
056104146
ABSTRACT:
In a semiconductor device wherein an active device circuit and electrically conductive lines, such as a power source line for supplying power to the semiconductor active device circuit or signal lines for inputting a signal to the semiconductor active device circuit, are formed together on a single substrate, an improved arrangement wherein a conventional power source or signal line is formed by using a plurally of individual lines of substantially uniform electrical resistance where the electrical resistance of each line is limited to a predetermined value. Moreover, a waveform deterioration response signal component is added to a signal transmitted through the signal lines so as to improve the transmitted signal by compensating for waveform deterioration experienced during circuit operation. In addition, an electrical capacity forming electrode is provided alongside substantial length of the power source line. A capacitor is thus effectively formed within the active device circuit by intervening a dielectric between the power source line and the capacity forming electrode so as to reduce high-frequency noise which occurs in the power source line. The disclosed arrangements substantially reduce the occurrence of an irregular operation in the active device circuit.
REFERENCES:
patent: 4107656 (1978-08-01), Farnsworth
patent: 5071733 (1991-12-01), Uekita et al.
patent: 5200847 (1993-04-01), Mawatari et al.
patent: 5399992 (1995-03-01), Itakura et al.
patent: 5434433 (1995-07-01), Takasu et al.
patent: 5479236 (1995-12-01), Tanaka
Semiconductor Devices, Physics & Technology, S. M. Sze, 85.
Ishii Yutaka
Katoh Ken-ichi
Yamane Yasukuni
Yoneda Hiroshi
Yoshida Shigeto
Abraham Fetsum
Crane Sara W.
Sharp Kabushiki Kaisha
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-445285