Semiconductor device

Details Semiconductor device Semiconductor device

1985-12-05

1990-09-04

Hille, Rolf

357 71, H01L 2354, H01L 2348

Patent

active

049548700

ABSTRACT:
Semiconductor device in which a semiconductor chip is fixed to a lead frame by Sn-Cu alloy solder with a first metal layer interposed between the chip and the solder. The first metal layer is formed at a thickness ranging from 2000 .ANG. to 3 .mu.m, and made of a metal selected from Ti, Cr, V, Zr, Nb and an alloy containing at least one of these metals. A second metal layer made of Ni, Co or an alloy containing at least one of these metals may be interposed at a thickness smaller than that of the first metal between the first metal layer and the solder.

REFERENCES:
patent: 3679492 (1972-07-01), Fang et al.
patent: 3706015 (1972-12-01), Schimmer et al.
patent: 4005454 (1977-01-01), Froloff et al.

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