Semiconductor device

Details Semiconductor device Semiconductor device

1985-04-01

1990-02-06

Hille, Rolf

357 71, H01L 2354, H01L 2188

Patent

active

048992062

ABSTRACT:
Described is a semiconductor device comprising a metal wiring formed on a semiconductor wiring including a device or devices, wherein impurities are injected into the metal wiring by ion implantation for suppressing the whiskers that may otherwise develop during processing of the metal wiring. Shorting among the wiring layers caused by such whiskers may be suppressed and the yield rate and operational reliability of the semiconductor device may be improved.

REFERENCES:
patent: 3631305 (1971-12-01), Bhatt et al.
patent: 3743894 (1973-07-01), Hall et al.
patent: 3879804 (1975-04-01), Ames et al.
patent: 3887994 (1975-06-01), Ku et al.
patent: 4242698 (1980-12-01), Ghate et al.
patent: 4330343 (1982-05-01), Christou et al.
"Effects of Al Films on Ion--Implanted Si", Lee et al.--Appl. Phys. Letts., vol. 20. No. 2, Jan. 15, 1972, pp. 73-75.
"Enhanced Migration of Implanted Sb and In in Si Covered with Evaporated Al"--Lee et al.--Appl. Phys. Lett., vol. 20, No. 2, Jan. 15, 1972, pp. 76-77.
"Prevention of Corrosion of Copper by Ion Implantation"--Crowder--IBM Tech Disclosure Bulletin, vol. 14, No. 1, 6-1971, p. 198.
"Eliminating Formation of Hillocks During Annealing of Aluminum-Copper Films"--d'Heurle et al.--IBM Tech. Disclosure Bulletin, vol. 14, No. 6, Nov. 1971, p. 1923.
"Boron Doped Aluminum Conductive Stripes for Semiconductor Devices"--Jun. 1971, IBM Technical Disclosure Bulletin, vol. 14, No. 1--Herdzik et al.--p. 260.
"Thin Film Stripes for Electronic Interconnection"--d'Heurle--IBM Technical Disclosure Bulletin, vol. 14, No. 2, 7-1971, pp. 596-597.

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