Semiconductor device

Details Semiconductor device Semiconductor device

1990-09-17

1991-12-24

Hille, Rolf

357 39, 357 91, H01L 2974

Patent

active

050757512

ABSTRACT:
A semiconductor device is formed with a high specific resistance zone between the anode and cathode zones on each side of the device, with a lattice defect zone in the anode zone in the vicinity of the high specific resistance zone. As a result, the turn-off time for the device can be sufficiently shortened, not only at normal temperatures, but at relatively high temperatures as well.

REFERENCES:
patent: 4056408 (1977-11-01), Bartko et al.
patent: 4224083 (1980-09-01), Cresswell
patent: 4278475 (1981-07-01), Bartko et al.
patent: 4311534 (1982-11-01), Bartko et al.
patent: 4816891 (1989-03-01), Nishizawa
PCIM '88 Proceedings, "Low-Loss High Efficiency, Planar-Gate Normally-Off Type Static Induction (SI) Thyristor", by Abe et al., pp. 165-173.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-47503