Semiconductor device

Details Semiconductor device Semiconductor device

1986-02-26

1987-10-13

Smith, John D.

Coating processes

Electrical product produced

Welding electrode

427 55, 4272481, 437235, 437245, B05D 306

Patent

active

046998012

ABSTRACT:
A semiconductor device is produced in such a manner that light having a wavelength in a range of 400 to 1000 nm is irradiated on a substrate so as to excite bonding hand of a material gas into a vibrating condition, and a thin film is formed on the substrate in accordance with a chemical vapor deposition method.

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W. T. Stacy, E. K. Broadbent and M. H. Norcott, J. Electrochem. Soc., vol. 132, No. 2, pp. 444-448 (1985), "Interfacial Structure of Tungsten Layers Formed by Selective Low Pressure Chemical Vapor Deposition".
E. K. Broadbent, C. L. Ramiller, J. Electrochem. Soc., vol. 131, No. 6, pp. 1427-1433 (1984), "Selective Low Pressure Chemical Vapor Deposition of Tungsten".
R. W. Andreatta, C. C. Abele, J. F. Osmundsen, J. G. Eden, D. Lubben and J. E. Greene "Low-Temperature Growth of Polycrystalline Si and Ge Films by Ultra Violet Laser Photo Dissociation of Silane and Germane", Appl. Phys. Lett., vol. 40, No. 2, 15 Jan. 1982, pp. 183-185.

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