Semiconductor detector with optimised radiation entry window

Details Semiconductor detector with optimised radiation entry window Semiconductor detector with optimised radiation entry window

2006-09-12

2006-09-12

Porta, David (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

C250S370130

Reexamination Certificate

active

07105827

ABSTRACT:
Described is a semiconductor detector for detecting electromagnetic radiation or particle radiation, comprising a semiconductor body (10) of a first conduction type, comprising first and second main surfaces; a group of drift electrodes comprising a second, opposite, conduction type, with said drift electrodes being arranged on the first main surface for generating at least one drift field in the semiconductor body (10); and a counterelectrode arrangement (30) which is arranged on the second main surface, which comprises the second conduction type and which forms a radiation entry window, wherein the counterelectrode arrangement (30) comprises a two-dimensional main electrode (31) and at least one barrier electrode (32) which are electrically insulated from each other, and wherein the barrier electrode (32), of which there is at least one, is connected to a voltage source (50) and is designed such that a blocking voltage is applied to it relative to the semiconductor body (10), with said blocking voltage exceeding the blocking voltage of the main electrode (31).

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Florini, C., et al; “Single-Side Blasing of Silicon Drift Detectors with Homogeneous Light-Entrance Window”, IEEE Transactions on Nuclear Science, vol. 47:No. 4, pp. 1691-1695.

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