Semiconductor detector having integrated coupling capacitors and

Details Semiconductor detector having integrated coupling capacitors and Semiconductor detector having integrated coupling capacitors and

1988-05-03

1990-01-23

Sikes, William L.

357 47, 357 48, 357 51, H01L 2714

Patent

active

048962015

ABSTRACT:
A semiconductor radiation detector has an at least partially or even completely depleted base region of a first conductivity, to which a bias voltage is applied, and has at least one output or read-out electrode at which a signal is produced by the charge carriers generated by radiation incident on the detector. The read-out or output electrode includes a highly doped region of the first or a second conductivity, onto which an insulating layer and thereupon a conducting electrode layer are applied for outputting the generated or induced signals. The voltage application to the highly doped region of the read-out or output electrode is achieved through a high impedance through the base region of the detector, from at least one electrode of the same conductivity as that of the output or read-out electrode. Thus, it is simply possible to capacitively couple the detector to external circuitry even if these external circuits have a complex structure or arrangement.

REFERENCES:
patent: 4028719 (1977-06-01), Curtis
patent: 4496964 (1985-01-01), Isubouchi et al.

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