Semiconductor detection apparatus for detecting nuclear radiatio

Details Semiconductor detection apparatus for detecting nuclear radiatio Semiconductor detection apparatus for detecting nuclear radiatio

1993-10-01

1994-08-09

Fields, Carolyn E.

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

25037001, 25037002, 25037013, 25037014, 257429, G01T 124

Patent

active

053368908

ABSTRACT:
A high sensitivity semiconductor radiation detector and semiconductor radiation detection apparatus having pn junctions formed in surfaces of at least one semiconductor wafer. A common electrode for the pn junctions may be formed in substrate regions of the semiconductor wafers, and a variable reverse bias voltage may be supplied to at least one electrode formed in contact with a pair of pn junctions. The variable reverse bias means adjusts depletion region thickness(es) so that the detector can detect and distinguish different kinds of nuclear radiation by differing energy levels.

REFERENCES:
patent: 3484663 (1969-12-01), Halus
patent: 3792197 (1974-02-01), Chai
patent: 4011016 (1977-03-01), Layne et al.
patent: 4309604 (1982-01-01), Yoshikawa et al.
patent: 4651001 (1987-03-01), Harada et al.
Avdeichikov, "Semiconductor Si(npn) Detector with Two Surface-Barrier Junction", Nucl. Instrum. and Meth., 138(2), Oct., 1976, p. 381.

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