Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1991-11-19
1993-08-03
Westin, Edward P.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307452, H03K 190948
Patent
active
052332403
ABSTRACT:
For implementation typically as an IC, a semiconductor decoding device comprises an additional MOS FET (26) of a first conductivity type between ground and output terminals, each (12) of which is connected to a power supply terminal (19) through a load MOS FET (18) of a second conductivity type and to a parallel circuit (13) of a plurality of MOS FET's (14-1etc) of the first conductivity type. Connected to the additional MOS FET and such load MOS FET's and supplied with a control input signal, a charge control section (27) puts the additional MOS FET in a conductive and a non-conductive state while putting each load MOS FET in an off and an on state. Preferably, a current limiting MOS FET (28) of the second conductivity type is connected between the supply terminal and the load MOS FET's and to a current limiting circuit (31-33) for limiting a load current which flows through the current limiting MOS FET and each load MOS FET put in the on state. Alternatively, the current limiting MOS FET is connected between each output terminal and the supply terminal. In this event, a current control circuit is supplied with the control input signal to put the additional MOS FET in the conductive and the non-conductive state while putting and isolating the current limiting MOS FET in an off state and from the control input signal. Another control circuit is supplied with another control input signal to put in an on state the current limiting MOS FET isolated from the first-mentioned control input signal.
REFERENCES:
patent: 3857046 (1974-12-01), Varadibriarwood et al.
patent: 4471240 (1984-09-01), Novosel
patent: 4581548 (1986-04-01), Young
patent: 4689494 (1987-08-01), Chen et al.
patent: 4730133 (1988-03-01), Yoshida
patent: 5022010 (1991-06-01), Chan
Driscoll Benjamin D.
NEC Corporation
Westin Edward P.
LandOfFree
Semiconductor decoding device comprising an MOS FET for discharg does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor decoding device comprising an MOS FET for discharg, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor decoding device comprising an MOS FET for discharg will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2273273