Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1987-12-09
1989-06-06
Hudspeth, David
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307449, 307451, 307463, 307475, 36523006, H03K 19017
Patent
active
048374628
ABSTRACT:
The invention relates to a semiconductor device which has a high density of integration and of which a low power consumption is required. The semiconductor device prevents the influence of the amplitude of an input signal upon the amplitude of an output signal in such a way that a preceding circuit and a succeeding circuit are provided with different reference voltages. The semiconductor device is constructed of a circuit which includes a bipolar transistor and an insulated-gate field effect transistor, and which operates with reference to one or more voltages, at least one of the reference voltages having a voltage value different from a reference operating voltage of a preceding circuit. A first switching circuit is interposed between a first reference voltage and an input node of a driver circuit, and a second switching circuit is interposed between an output of a preceding circuit and the input of the driver circuit, so that when an output signal of the preceding circuit is at a high level, the seconding circuit switch is turned "on" while the first switching circuit is turned "off" thereby to produce a still higher potential, and that when the output signal of the preceding circuit is at a low level, the second switching circuit is turned "off" while the first switching circuit is turned "on". The semiconductor device is suited to high-density DRAM and SRAM circuits which use voltage limiters.
REFERENCES:
patent: 3631528 (1971-12-01), Green
patent: 4280065 (1981-07-01), Minato et al.
patent: 4574273 (1986-03-01), Atsumi et al.
patent: 4616143 (1986-10-01), Miyamoto
patent: 4646124 (1987-02-01), Zunino
patent: 4665505 (1987-05-01), Miyakawa et al.
patent: 4677317 (1987-06-01), Sakuma
patent: 4689495 (1987-08-01), Liu
patent: 4697109 (1987-09-01), Honma et al.
patent: 4717847 (1988-01-01), Nolan
Electronics Int., vol. 52, No. 25, 6th Dec. 1979, pp. 133 and 135, R. H. Hamstra "Bipolar and V-MOS Hybrid Delivers Fast Power Pulses".
Radio Fernsehen Elektronik, vol. 33, No. 3, Mar. 1983, pp. 165, 16 East-Berlin; D. Knoblich et al, "CMOS-Schaltkreise U 4050 D, U 40098 D, U 4093 D and U 40511 D".
Electronics, 6th Oct. 1981, pp. 124-126, R. M. Pate et al, "PROM Needs Far Less Power Than Bipolar Counterparts".
Hori Ryoichi
Itoh Kiyoo
Kawahara Takayuki
Kawajiri Yoshiki
Kitukawa Goro
Hitachi , Ltd.
Hudspeth David
LandOfFree
Semiconductor decoder circuit having switching means for prevent does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor decoder circuit having switching means for prevent, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor decoder circuit having switching means for prevent will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-42191