Semiconductor crystal growth method

Details Semiconductor crystal growth method Semiconductor crystal growth method

1995-03-03

1996-01-30

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 14, 117 15, 117208, C30B 1520

Patent

active

054873550

ABSTRACT:
A method of growing semiconductor crystals including inserting a single crystal seed (14) of a semiconductor material into a melt (12) and pulling the seed (14) at a first rate to gradually grow an elongated, single crystal first neck (15), altering the pulling rate to a second rate, slower than the first rate, to grow a shoulder (17) on the first neck (15) with a diameter greater than the first neck (15), continuing to pull at the second rate to form a second neck (18) with a diameter equal to the diameter of the shoulder (17), and altering the pulling rate to a third rate, slower than the second rate, to grow a single crystal elongated body (20) of the semiconductor material.

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