Semiconductor crystal growth apparatus

Details Semiconductor crystal growth apparatus Semiconductor crystal growth apparatus

1989-05-26

1990-12-04

Chaudhuri, Olik

Chemical apparatus and process disinfecting, deodorizing, preser

Physical type apparatus

Crystallizer

422110, 118688, 118715, 118724, 118725, B05C 1100

Patent

active

049752529

ABSTRACT:
A substrate is heated in a crystal growth vessel evacuated to a ultrahigh vacuum, and gases containing component elements of a crystal to be grown on the substrate are introduced into the vessel under predetermined conditions to cause successive epitaxial growth of single molecular layers, the number of growth cycles being automatically controlled. A mass analyzer is disposed opposite to the substrate in the vessel so that the progress of crystal growth can be incessantly traced and evaluated for each of the molecular layers. An etchant gas introduction nozzle extends into the vessel to make etching treatment of the surface of the substrate in the evacuated vessel prior to the crystal growth.

REFERENCES:
patent: 3916034 (1975-10-01), Tsuchimoto
patent: 4058430 (1977-11-01), Suntola
patent: 4159919 (1979-07-01), McFee et al.
patent: 4160166 (1979-07-01), Etienne et al.
patent: 4160690 (1979-07-01), Shibagaki
patent: 4214926 (1980-07-01), Katsuto et al.
patent: 4223048 (1980-09-01), Engle
patent: 4277304 (1981-07-01), Horiike
patent: 4435445 (1984-03-01), Aurea
patent: 4662312 (1987-05-01), Aoki
Brice, Jr. Crystal Growth Processes, Wiley & Sons, NY (1986), pp. 242-245.
O'Hanlon, J. A Users Guide to Vacuum Technology, John Wiley & Sons (1980), Chapter 4.

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