Semiconductor conversion of optical-to-electrical energy

Details Semiconductor conversion of optical-to-electrical energy Semiconductor conversion of optical-to-electrical energy

1982-12-30

1985-06-25

Larkins, William D.

357 4, 357 30, 357 58, H01L 2714, H01L 2988, H01L 3106

Patent

active

045257310

ABSTRACT:
Optical-to-electrical conversion is accomplished using an undoped region bounded by a tunneling junction of the order of the mean free path of an electron. A number of regions are assembled in series with larger thickness away from the light incident surface. The thickness and doping of the regions for maximum effectiveness in monochromatic light are tailored to produce similar quantities of carriers from the light. A nine section GaAs structure with 50 .ANG. n.sup.+ and p.sup.+ tunneling bounding regions has a 90% quantum efficiency and delivers a 5 volt output with a 0.35 picosecond transit time.

REFERENCES:
patent: 4127862 (1978-11-01), Ilegems et al.
patent: 4282541 (1981-08-01), Tsang
Electronics Letters, vol. 16, No. 22, 23rd Oct. 1980, pp. 836 & 837, "Planar-Doped Barriers in GaAs by Molecular Beam Epitaxy", by Malik et al.
International Electron Devices Meeting Technical Digest, Dec. 13-14-15, 1982, pp. 334-337, San Francisco, CA, "Superlattice, Graded Band Gap, Channeling and Staircase Avalanche Photodiodes Towards a Solid-State Photomultiplier" by Capasso et al.

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