Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With contact or metallization configuration to reduce...
Patent
1995-12-06
1996-11-19
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With contact or metallization configuration to reduce...
257499, H01L 2900
Patent
active
055765750
ABSTRACT:
A semiconductor conversion device is disclosed with particular utility in connection with minimizing malfunctions of the device's switching elements. The conversion device according to the present invention has a bridge circuit configuration and consists of a main transistor circuit and a drive-circuit network for controlling the transistor switching operation. The main transistor circuit consists of at least one semiconductor switching element for each of at least one upper-arm circuit and one lower-arm circuit. The drive-circuit network consists of individual component drive circuits associated with the respective semiconductor switching elements. The component drive circuits are mounted on wiring patterns of a foil-like conductor on a printed wiring substrate. The wiring patterns of the individual component drive circuits are configured to minimize the value of the parasitic capacitance formed between the wiring patterns. This, in turn, prevents individual drive circuits from malfunctioning due to high-frequency noise currents. Furthermore, a dedicated individual reference electrical potential line is provided for each of the drive circuits and connected to a common reference electrical potential line. As a result, the reference electrical potential remains constant for each reference electrical potential line, and the individual drive circuits are prevented from delivering incorrect drive signals due to varying reference electrical potential.
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Fuji Electric & Co., Ltd.
Jackson Jerome
Kelley Nathan K.
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