Semiconductor controlled rectifier with configured cathode to el

Details Semiconductor controlled rectifier with configured cathode to el Semiconductor controlled rectifier with configured cathode to el

1978-09-12

1980-07-01

Clawson, Jr., Joseph E.

357 20, 357 86, H01L 2974

Patent

active

042109248

ABSTRACT:
A semiconductor controlled rectifier comprises a semiconductor substrate having four layers of alternate n- and p-type conductivities and includes two main surfaces one of which is formed of the exposed surface of first and second layers and the other of which is formed of the exposed surface of a fourth layer. A gate electrode of a rectangular shape is disposed on the second layer on the one main surface and a cathode electrode is disposed on the first layer so as to extend along at least two sides of the rectangular gate electrode. The cathode electrode portion extending along the short side of the rectangular gate extends slightly beyond a p-n junction defined between the first and second layers, so as to be in ohmic contact with the second layer.

REFERENCES:
patent: 3590346 (1971-06-01), Bilo et al.
patent: 3777229 (1973-12-01), Burtscher et al.
patent: 3990090 (1976-11-01), Terasawa et al.
patent: 4063270 (1977-12-01), Kimura et al.
patent: 4114178 (1978-12-01), Terasawa et al.

Affiliated with

Also associated with

Rating

Semiconductor controlled rectifier with configured cathode to el does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor controlled rectifier with configured cathode to el, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor controlled rectifier with configured cathode to el will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-301454