Semiconductor controlled rectifier device

Details Semiconductor controlled rectifier device Semiconductor controlled rectifier device

1974-07-22

1977-06-07

Lynch, Michael L.

357 20, 357 86, H01L 2974

Patent

active

040287211

ABSTRACT:
A semiconductor controlled rectifying device comprising a semiconductor substrate having four layers of PNPN, a couple of main electrodes in ohmic contact with the outside ones of the four layers respectively, a gate electrode provided on the intermediate P layer, an N-type minor region formed in the intermediate P layer in the vicinity of the gate electrode, and a conductor in contact with part of the outside N layer and with the minor region and disposed along the outer periphery of the outside N layer on the intermediate P layer.

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patent: 3440501 (1969-04-01), Piccone et al.
patent: 3476989 (1969-11-01), Miles et al.
patent: 3489962 (1970-01-01), McIntyre et al.
patent: 3579060 (1971-05-01), Davis
patent: 3622845 (1971-11-01), McIntyre et al.
patent: 3783350 (1974-01-01), Yatsuo et al.
patent: 3836994 (1974-09-01), Piccone et al.
patent: 3914783 (1975-10-01), Terasawa
J. Garrett, "The Evolution of a High-Power Fast-Switching Thyristor," Electrical Engineer, vol. 48, No. 5, May 1971, pp. 33-35.

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