Semiconductor controlled luminescent device

Details Semiconductor controlled luminescent device Semiconductor controlled luminescent device

1977-03-25

1979-05-01

Edlow, Martin H.

357 18, 357 22, H01L 2980

Patent

active

041527119

ABSTRACT:
A p type semiconductor gate layer is buried in an N type semiconductor cathode layer to encircle a channel through which the forward current of a luminescent PN junction passes. A reverse voltage is applied to the gate layer to spread a depletion layer in the channel to control the forward current and therefore the emission of light. The gate layer may be disposed on that surface of the cathode layer remote from the luminescent PN junction with a groove disposed the other surface of the cathode layer to narrow the channel.

REFERENCES:
patent: 3447044 (1969-05-01), Sandbank
patent: 3492548 (1970-01-01), Goodman
patent: 3508111 (1970-04-01), Davidson
patent: 3894295 (1975-07-01), Shannon

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