Semiconductor-containing glass and method for producing same

Details Semiconductor-containing glass and method for producing same Semiconductor-containing glass and method for producing same

1990-04-10

1992-02-25

Group, Karl

Compositions

Electrically conductive or emissive compositions

Metal compound containing

252520, 501 10, 501 32, 501 56, 501 68, 501 54, 501 12, C03C 304

Patent

active

050911155

ABSTRACT:
A semiconductor-containing glass having a high nonlinear optical effect is provided which comprises a glass matrix mainly composed of SiO.sub.2 wherein said glass matrix contains a semiconductor microcrystal having a particle size of less than 100.ANG..
This semiconductor-containing glass is produced by a method which comprises subjecting a solution containing a metal alkoxide containing at least a silicon alkoxide as well as a semiconductor having a particle size of less than 100.ANG., to hydrolysis reaction to obtain a gelled solid and heating the resulting gelled solid to 400.degree.-1300.degree. C. to form a glass or a method which comprises subjecting a solution containing a metal alkoxide containing at least a silicon alkoxide as well as a metal salt which becomes semiconductor upon decomposition, to hydrolysis reaction to obtain a gelled solid; heating the gelled solid to 400.degree.-1300.degree. C. to form a glass; and simultaneously with or after the heating to 400.degree.-1300.degree. C., reacting the gelled solid or the glass with a gas containing an atom which reacts with a metal element in said metal salt to provide a semiconductor, thereby to precipitate a semiconductor microcrystal having a particle size of less than 100.ANG..

REFERENCES:
patent: 3607789 (1971-09-01), Murthy et al.
patent: 4000998 (1977-01-01), Rittler
patent: 4264679 (1981-04-01), Panzarino et al.
patent: 4657699 (1987-04-01), Nair
patent: 4814298 (1989-03-01), Nelson et al.

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