Semiconductor contact with discontinuous noble metal

Details Semiconductor contact with discontinuous noble metal Semiconductor contact with discontinuous noble metal

1992-01-08

1994-01-11

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257750, 257768, 257769, H01L 2348, H01L 2946, H01L 2954, H01L 2962

Patent

active

052784509

ABSTRACT:
A semiconductor device with a monocrystalline silicon body (1) is provided with a dielectric layer (2) with contact holes (3) through which the silicon body (1) is contacted with an aluminum metallization. To avoid undesirable separation of silicon, a discontinuous nucleus layer (5) of a metal nobler than silicon is formed on the silicon body (1) in the contact holes (3) preceding the provision of the metallization (4). Metals such as palladium and copper may be used to form the discontinuous layer.

REFERENCES:
patent: 4151545 (1979-04-01), Schnepf et al.
patent: 4431685 (1984-02-01), Canestaro et al.
patent: 4520554 (1985-06-01), Fisher
patent: 4931845 (1990-06-01), Ema
patent: 5017516 (1991-05-01), Van Der Putten
patent: 5158860 (1992-10-01), Gulla et al.

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