Semiconductor contact that partially overlaps a conductive line

Details Semiconductor contact that partially overlaps a conductive line Semiconductor contact that partially overlaps a conductive line

1995-04-14

1996-06-25

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257635, 257758, H01L 2348, H01L 2352, H01L 2940

Patent

active

055302947

ABSTRACT:
A contact of a semiconductor device has an interlayer-insulating film sandwiched between upper and lower conductive line patterns, a conductive pad for electrically connecting the upper and lower conductive line patterns via a contact hole formed in the interlayer-insulating film to expose the lower conductive line pattern to the upper conductive line pattern, and a barrier material pattern formed on the upper conductive line pattern and conductive pad to partially overlap the conductive pad with the upper conductive line pattern, so that the lower and upper conductive line patterns on both sides of the interlayer-insulating film partially overlap with each other without damaging the lower conductive line pattern, thereby improving packing density of the semiconductor device. Also, a manufacturing method of the contact is provided.

REFERENCES:
patent: 4102733 (1978-07-01), De La Moneda et al.
patent: 4833519 (1989-05-01), Kawano et al.
patent: 5094980 (1992-03-01), Shepela
patent: 5177592 (1993-01-01), Takahashi et al.
patent: 5182627 (1993-01-01), Chen et al.
patent: 5184205 (1993-02-01), Shibata
patent: 5202579 (1993-04-01), Fujii et al.
patent: 5293512 (1994-03-01), Nishigoori et al.

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