Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2007-10-16
2008-12-16
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S207000, C257S208000, C257S211000, C257S686000, C257S698000, C257S758000, C257S759000, C257S760000
Reexamination Certificate
active
07466028
ABSTRACT:
A semiconductor device structure for a three-dimensional integrated circuit is provided. The semiconductor device structure includes: a substrate having a first surface and a second surface; a via defined in the substrate and extending from the first surface to the second surface; and a first plurality of contact structures on the first surface contacting the via. A cross section of each of the first plurality of contact structures parallel to the first surface has a first side and a second side, and a ratio of the longer side to the shorter side of the first side and the second side is more than about 2:1.
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Chiou Wen-Chih
Tu Hung-Jung
Wu Weng-Jin
Yu Chen-Hua
Snell & Wilmer L.L.P.
Soward Ida M
Taiwan Semiconductor Manufacturing Co. Ltd.
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