Semiconductor contact silicide/nitride process with control for

Details Semiconductor contact silicide/nitride process with control for Semiconductor contact silicide/nitride process with control for

1987-08-24

1988-11-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437190, 437192, 437239, 437242, 437161, 148DIG147, 148DIG112, 148DIG118, H01L 21283

Patent

active

047849738

ABSTRACT:
A titanium silicide/titanium nitride process is disclosed wherein the thickness of the titanium nitride can be regulated with respect to the titanium silicide. In particular, a control layer is formed in the contact opening during a reactive cycle to form a relatively thin (20 to 50 angstrom) control layer. Titanium is thereafter deposited and in another thermal reaction the control layer retards the development of titanium silicide without retarding the development of titanium nitride so that the thickness of titanium silicide is kept small. A double titanium process can also be used.

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