Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2005-09-13
2005-09-13
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S639000, C257S640000, C257S649000, C438S082000, C438S725000, C438S736000
Reexamination Certificate
active
06943432
ABSTRACT:
The invention includes a semiconductor construction comprising a semiconductor substrate, and a first layer comprising silicon and nitrogen over the substrate. A second layer comprising at least 50 weight% carbon is over and physically against the first layer, and a third layer consisting essentially of a photoresist system is over and physically against the second layer. The invention also includes methodology for forming the semiconductor construction.
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Website: “Clinically Amplified Photoresists,” http://www.almaden.ibm st projects sub160nm obectives ca. Printed Dec. 31, 2001, 1 page.
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Website: “Clinically Amplified Photoresists.” http://www.almaden.ibm/st/projects/subioonm/objectives/ca. Printed Dec. 31, 2001. 1 page.
Kang Donghee
Micro)n Technology, Inc.
Wells St. John P.S.
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