Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2010-07-15
2011-10-11
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S499000, C257S510000, C257S513000, C257S288000, C257S368000
Reexamination Certificate
active
08035189
ABSTRACT:
The invention includes methods of forming oxide structures under corners of transistor gate stacks and adjacent trenched isolation regions. Such methods can include exposure of a semiconductor material to steam and H2, with the H2being present to a concentration of from about 2% to about 40%, by volume. An oxide structure formed under the bottom corner of a transistor gate stack can have a bottom surface with a topography that includes a step of at least about 50 Å, and an upper surface directly over the bottom surface and having a topography that is substantially planar. Methodology of the present invention can be utilized to form semiconductor constructions suitable for incorporation into highly integrated circuitry. The highly integrated circuitry can be incorporated into electronic systems, and can, for example, be utilized in processors and/or memory storage devices.
REFERENCES:
patent: 6027982 (2000-02-01), Peidous et al.
patent: 7781860 (2010-08-01), Smith et al.
patent: 2002/0197823 (2002-12-01), Yoo et al.
patent: 2005/0136588 (2005-06-01), Speyer
Balasubramanian, N. et al., “Active Corner Engineering in the Process Integration for Shallow Trench Isolation”, J. Vac.Sci.Technol. B 18(2), Mar./Apr. 2000, pp. 700-705.
Tung, C. et al, ULSI Semiconductor Technology Atlas, Wiley-Interscience 2003, Chap. 6.5 “Shallow Trench Isolation (STI)” pp. 235-249.
Sandhu Sukesh
Smith Michael A.
Wolstenholme Graham
Zhou Xianfeng
Micro)n Technology, Inc.
Pham Long
Wells St. John P.S.
LandOfFree
Semiconductor constructions does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor constructions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor constructions will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4280557