Semiconductor constructions

Details Semiconductor constructions Semiconductor constructions

2006-04-18

2006-04-18

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C438S666000

Reexamination Certificate

active

07030499

ABSTRACT:
The invention includes methods of forming openings extending through electrically insulative layers to electrically conductive materials. In an exemplary aspect, a substrate is provided which supports a stack and an electrical node. The stack comprises an electrically insulative cap over an electrically conductive material. An electrically insulative layer is formed over the stack and over the electrical node. A first etch is utilized to etch through the electrically insulative layer to the electrical node and to the electrically insulative cap. The first etch etches partially into the electrically insulative cap but does not etch entirely through the electrically insulative cap. A second etch is utilized after the first etch to etch entirely through the electrically insulative cap to the electrically conductive material of the stack.

REFERENCES:
patent: 5362666 (1994-11-01), Dennison
patent: 5498570 (1996-03-01), Becker
patent: 5753565 (1998-05-01), Becker
patent: 5907781 (1999-05-01), Chen et al.
patent: 6271125 (2001-08-01), Yoo et al.
patent: 6300178 (2001-10-01), Sunouchi
patent: 6423627 (2002-07-01), Carter et al.

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