Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2006-08-22
2006-08-22
Clark, S. V. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S649000
Reexamination Certificate
active
07095095
ABSTRACT:
The invention includes a semiconductor construction. The construction has a semiconductor material die with a front surface, a back surface in opposing relation to the front surface, and a thickness of less than 400 microns between the front and back surfaces. The construction also has circuitry associated with the die and over the front surface of the die, and a layer touching the back surface of the die. The layer can correspond to getter-inducing material and/or to a stress-inducing material. The layer can have a composition which includes silicon dioxide and/or silicon nitride. The composition can include one or more hydrogen isotopes, and the hydrogen isotopes can have a higher abundance of deuterium than the natural abundance of deuterium.
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Jiang Tongbi
Yin Zhiping
Clark S. V.
Wells St. John P.S.
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