Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2005-03-08
2005-03-08
Elms, Richard (Department: 2824)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S622000, C438S672000, C438S719000
Reexamination Certificate
active
06864188
ABSTRACT:
To increase the etching resistance and to reduce the etching rate of a silicon-containing mask layer, an additional substance is mixed into the mask layer or into an etching gas. The additional substance is present in the mask layer or a concentration of the additional substance can be subsequently increased in the mask layer. During a subsequent etching process for patterning using the mask layer, the mask layer is removed at a reduced etching rate.
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Elms Richard
Greenberg Laurence A.
Locher Ralph E.
Stemer Werner H.
Wilson Christian D.
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